Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed. Using solutions of linear equations, the substrate region is partitioned into several 1-D MOS structures and the coupling capacitanc...
-д хадгалсан:
| Үндсэн зохиолчид: | , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
IEEE
2017-01-01
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| Цуврал: | IEEE Journal of the Electron Devices Society |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://ieeexplore.ieee.org/document/7880655/ |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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