Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed. Using solutions of linear equations, the substrate region is partitioned into several 1-D MOS structures and the coupling capacitanc...
שמור ב:
| Principais autores: | , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
IEEE
2017-01-01
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| סדרה: | IEEE Journal of the Electron Devices Society |
| נושאים: | |
| גישה מקוונת: | https://ieeexplore.ieee.org/document/7880655/ |
| תגים: |
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