Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed. Using solutions of linear equations, the substrate region is partitioned into several 1-D MOS structures and the coupling capacitanc...
Tallennettuna:
| Päätekijät: | , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IEEE
2017-01-01
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| Sarja: | IEEE Journal of the Electron Devices Society |
| Aiheet: | |
| Linkit: | https://ieeexplore.ieee.org/document/7880655/ |
| Tagit: |
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