Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs
A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed. Using solutions of linear equations, the substrate region is partitioned into several 1-D MOS structures and the coupling capacitanc...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IEEE
2017-01-01
|
| Schriftenreihe: | IEEE Journal of the Electron Devices Society |
| Schlagworte: | |
| Online-Zugang: | https://ieeexplore.ieee.org/document/7880655/ |
| Tags: |
Keine Tags, Fügen Sie das erste Tag hinzu!
|