Numerical Simulation of Nanoscale Double-Gate MOSFETs
The further improvement of nanoscale electron devices requires support by numerical simulations within the design process. After a brief description of our SIMBA 2D/3D-device simulator, the results of the simulation of DG-MOSFETs are represented. Starting from a basic structure with a gate length of...
Furkejuvvon:
| Váldodahkkit: | , , , |
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| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
CTU Central Library
2006-01-01
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| Ráidu: | Acta Polytechnica |
| Fáttát: | |
| Liŋkkat: | https://ojs.cvut.cz/ojs/index.php/ap/article/view/876 |
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