An Investigation in the I-gate Body Contact for Partially Depleted SOI MOSFET
In this paper for the first time, a circuit model for multi-finger I-gate body-contacted silicon-on-insulator MOSFET is presented. The model parameters are adjusted using simulation of a 45 nm SOI nMOSFET. Using the model, typical body voltage for a 35 finger device is obtained and applied to the tr...
Sábháilte in:
| Príomhchruthaitheoirí: | , |
|---|---|
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
OICC Press
2024-02-01
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| Sraith: | Majlesi Journal of Electrical Engineering |
| Ábhair: | |
| Rochtain ar líne: | https://oiccpress.com/mjee/article/view/5264 |
| Clibeanna: |
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
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