Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs
The high frequency performances including microwave noise parameters for sub-quarter micron fully- (FD) and partially-depleted (PD) silicon-on-insulator (SOI) n-MOSFETs are described and compared. Direct extraction techniques based on the physical meaning of each small-signal and noise model elemen...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
National Institute of Telecommunications
2000-12-01
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| Edice: | Journal of Telecommunications and Information Technology |
| Témata: | |
| On-line přístup: | https://jtit.pl/jtit/article/view/25 |
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