High-temperature instability processes in SOI structures and MOSFETs
The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI struc- tures are presented....
Gorde:
| Egile Nagusiak: | , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
National Institute of Telecommunications
2001-03-01
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| Saila: | Journal of Telecommunications and Information Technology |
| Gaiak: | |
| Sarrera elektronikoa: | https://jtit.pl/jtit/article/view/47 |
| Etiketak: |
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