High-temperature instability processes in SOI structures and MOSFETs
The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI struc- tures are presented....
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| Główni autorzy: | , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
National Institute of Telecommunications
2001-03-01
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| Seria: | Journal of Telecommunications and Information Technology |
| Hasła przedmiotowe: | |
| Dostęp online: | https://jtit.pl/jtit/article/view/47 |
| Etykiety: |
Nie ma etykietki, Dołącz pierwszą etykiete!
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