Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drain
The ballistic transport behaviors of SOI nMOSFETs with NiSi metal source/drain (S/D) have been investigated. It is found that the suppression of Schottky barrier height for holes results in an improvement of carrier injection velocity (vinj), attributable to the increased electrical field at the sou...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
IEEE
2025-01-01
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| Rangatū: | IEEE Journal of the Electron Devices Society |
| Ngā marau: | |
| Urunga tuihono: | https://ieeexplore.ieee.org/document/11005719/ |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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