Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drain

The ballistic transport behaviors of SOI nMOSFETs with NiSi metal source/drain (S/D) have been investigated. It is found that the suppression of Schottky barrier height for holes results in an improvement of carrier injection velocity (vinj), attributable to the increased electrical field at the sou...

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Detalhes bibliográficos

Principais autores:	Rui Su, Yan Jing, Xinyi Zhang, Yi Jiang, Dawei Gao, Walter Schwarzenbach, Bich-Yen Nguyen, Junkang Li, John Robertson, Rui Zhang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2025-01-01
coleção:	IEEE Journal of the Electron Devices Society
Assuntos:	Carrier velocity SOI MOSFET Schottky barrier height
Acesso em linha:	https://ieeexplore.ieee.org/document/11005719/
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