An Analytical Drain Current Model for Surrounding-Gate Schottky Barrier MOSFET
The current of Schottky barrier metal-oxide-semiconductor field-effect transistor (MOSFET) is popularly calculated through the integration of Fermi-Dirac distribution for carrier over energy or self consistent iterative numerical calculation. In order to reduce the calculation complexity, this paper...
Сохранить в:
| Главные авторы: | , , |
|---|---|
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Editorial Department of Journal of Sichuan University (Natural Science Edition)
2017-01-01
|
| Серии: | 四川大学学报. 自然科学版 |
| Предметы: | |
| Online-ссылка: | http://science.scu.edu.cn/thesisDetails?columnId=45828583&Fpath=home&index=0 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
|