An Analytical Drain Current Model for Surrounding-Gate Schottky Barrier MOSFET
The current of Schottky barrier metal-oxide-semiconductor field-effect transistor (MOSFET) is popularly calculated through the integration of Fermi-Dirac distribution for carrier over energy or self consistent iterative numerical calculation. In order to reduce the calculation complexity, this paper...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Editorial Department of Journal of Sichuan University (Natural Science Edition)
2017-01-01
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| Series: | 四川大学学报. 自然科学版 |
| Assuntos: | |
| Acceso en liña: | http://science.scu.edu.cn/thesisDetails?columnId=45828583&Fpath=home&index=0 |
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