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PaperThe Impact of ExternallyApplied Mechanical Stress on Analogand RF Performances of SOI MOSFETs

his paper presents a complete study of the impactof mechanical stress on the performance of SOI MOSFETs.This investigation includes dc, analog and RF characteristics.Parameters of a small-signal equivalent circuit are also ex-tracted as a function of applied mechanical stress. Piezore-sistance coef...

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Autores principales: Mostafa Emam, Samer Houri, Danielle Vanhoenacker-Janvier, Jean-Pierre Raskin
Formato: Artigo
Lenguaje:Inglês
Publicado: National Institute of Telecommunications 2023-06-01
Colección:Journal of Telecommunications and Information Technology
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Acceso en línea:https://jtit.pl/jtit/article/view/957
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