Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs
The high frequency performances including microwave noise parameters for sub-quarter micron fully- (FD) and partially-depleted (PD) silicon-on-insulator (SOI) n-MOSFETs are described and compared. Direct extraction techniques based on the physical meaning of each small-signal and noise model elemen...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , |
|---|---|
| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
National Institute of Telecommunications
2000-12-01
|
| Цуврал: | Journal of Telecommunications and Information Technology |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://jtit.pl/jtit/article/view/25 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
|