Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications
In this study, we investigated the basic characteristics of the n- and p-type gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The devices exhibited steep subthreshold slope (< 1 mV/dec) and realized ultralow voltage swing (< 0.2 V) from the low leakage...
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| Asıl Yazarlar: | , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IEEE
2025-01-01
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| Seri Bilgileri: | IEEE Journal of the Electron Devices Society |
| Konular: | |
| Online Erişim: | https://ieeexplore.ieee.org/document/10855637/ |
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