An Investigation in the I-gate Body Contact for Partially Depleted SOI MOSFET

In this paper for the first time, a circuit model for multi-finger I-gate body-contacted silicon-on-insulator MOSFET is presented. The model parameters are adjusted using simulation of a 45 nm SOI nMOSFET. Using the model, typical body voltage for a 35 finger device is obtained and applied to the tr...

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Autores principales:	Arash Daghighi, Hassan Rafiei
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	OICC Press 2024-02-01
Colección:	Majlesi Journal of Electrical Engineering
Materias:	body resistance. Drain Induced Barrier Lowering I-gate Body Contact Silicon-on-Insulator MOSFET Two-Dimensional Device Simulation
Acceso en línea:	https://oiccpress.com/mjee/article/view/5264
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