Design of Cylindrical Surrounding Double-Gate MOSFET With Fabrication Steps Using a Layer-by-Layer Approach
The semiconductors with nanometer-scale are subjected to various patterns and scaling using the latest technology. The most widely used methods are top-down approaches in the design of complex heterostructures. The top-down approach involves the photolithography to ion sequentially beaming of the ma...
Tallennettuna:
| Päätekijät: | , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IEEE
2022-01-01
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| Sarja: | IEEE Access |
| Aiheet: | |
| Linkit: | https://ieeexplore.ieee.org/document/9928189/ |
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