Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation
This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation. Also, the results obtained have been compared with a multi-gate de...
保存先:
| 主要な著者: | , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
IEEE
2021-01-01
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| シリーズ: | IEEE Access |
| 主題: | |
| オンライン･アクセス: | https://ieeexplore.ieee.org/document/9579412/ |
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