Comparison of resistive switching characteristics using copper and aluminum electrodes on GeO(x)/W cross-point memories

Por Rahaman, Sheikh Ziaur, Maikap, Siddheswar
Publicado no Nanoscale Res Lett (2013)

TaO(x)-based resistive switching memories: prospective and challenges

Por Prakash, Amit, Jana, Debanjan, Maikap, Siddheswar
Publicado em 2013

Copper pillar and memory characteristics using Al(2)O(3) switching material for 3D architecture

Por Maikap, Siddheswar, Panja, Rajeswar, Jana, Debanjan
Publicado em 2014

Self-compliance-improved resistive switching using Ir/TaO(x)/W cross-point memory

Por Prakash, Amit, Jana, Debanjan, Samanta, Subhranu, Maikap, Siddheswar
Publicado em 2013

Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure

Por Maikap, Siddheswar, Jana, Debanjan, Dutta, Mrinmoy, Prakash, Amit
Publicado em 2014

RRAM characteristics using a new Cr/GdO(x)/TiN structure

Por Jana, Debanjan, Dutta, Mrinmoy, Samanta, Subhranu, Maikap, Siddheswar
Publicado no Nanoscale Res Lett (2014)

Impact of device size and thickness of Al(2)O(3) film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

Por Panja, Rajeswar, Roy, Sourav, Jana, Debanjan, Maikap, Siddheswar
Publicado no Nanoscale Res Lett (2014)

Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure

Por Kumar, Pankaj, Maikap, Siddheswar, Prakash, Amit, Tien, Ta-Chang
Publicado em 2014

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge(0.2)Se(0.8) Film in Cu/GeSe(x)/W Structure

Por Jana, Debanjan, Chakrabarti, Somsubhra, Rahaman, Sheikh Ziaur, Maikap, Siddheswar
Publicado no Nanoscale Res Lett (2015)

Impact of electrically formed interfacial layer and improved memory characteristics of IrO(x)/high-κ(x)/W structures containing AlO(x), GdO(x), HfO(x), and TaO(x) switching materia...

Por Prakash, Amit, Maikap, Siddheswar, Banerjee, Writam, Jana, Debanjan, Lai, Chao-Sung
Publicado em 2013

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO(3)/WO(x)/W Structure

Por Chakrabarti, Somsubhra, Samanta, Subhranu, Maikap, Siddheswar, Rahaman, Sheikh Ziaur, Cheng, Hsin-Ming
Publicado no Nanoscale Res Lett (2016)

Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

Por Prakash, Amit, Maikap, Siddheswar, Chiu, Hsien-Chin, Tien, Ta-Chang, Lai, Chao-Sung
Publicado em 2013

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface

Por Prakash, Amit, Maikap, Siddheswar, Chiu, Hsien-Chin, Tien, Ta-Chang, Lai, Chao-Sung
Publicado em 2014

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface

Por Prakash, Amit, Maikap, Siddheswar, Chiu, Hsien-Chin, Tien, Ta-Chang, Lai, Chao-Sung
Publicado em 2014

Resistive switching memory characteristics of Ge/GeO(x) nanowires and evidence of oxygen ion migration

Por Prakash, Amit, Maikap, Siddheswar, Rahaman, Sheikh Ziaur, Majumdar, Sandip, Manna, Santanu, Ray, Samit K
Publicado em 2013

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO(x)/GdO(x)/W cross-point memories

Por Jana, Debanjan, Maikap, Siddheswar, Prakash, Amit, Chen, Yi-Yan, Chiu, Hsien-Chin, Yang, Jer-Ren
Publicado em 2014

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Por Jana, Debanjan, Roy, Sourav, Panja, Rajeswar, Dutta, Mrinmoy, Rahaman, Sheikh Ziaur, Mahapatra, Rajat, Maikap, Siddheswar
Publicado no Nanoscale Res Lett (2015)

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface

Por Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn
Publicado em 2012

Detection of pH and Enzyme-Free H(2)O(2) Sensing Mechanism by Using GdO(x) Membrane in Electrolyte-Insulator-Semiconductor Structure

Por Kumar, Pankaj, Maikap, Siddheswar, Qiu, Jian-Tai, Jana, Surajit, Roy, Anisha, Singh, Kanishk, Cheng, Hsin-Ming, Chang, Mu-Tung, Mahapatra, Rajat, Chiu, Hsien-Chin, Yang, Jer-Ren
Publicado no Nanoscale Res Lett (2016)

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrO(x )nano-dots

Por Banerjee, Writam, Maikap, Siddheswar, Lai, Chao-Sung, Chen, Yi-Yan, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn, Yang, Jer-Ren
Publicado em 2012