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Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO(3)/WO(x)/W Structure
Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO(3)/WO(x)/W structure have been investigated for the first time. Transmission electron microscope image shows a...
में बचाया:
| में प्रकाशित: | Nanoscale Res Lett |
|---|---|
| मुख्य लेखकों: | , , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Springer US
2016
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5014781/ https://ncbi.nlm.nih.gov/pubmed/27605241 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1602-7 |
| टैग : |
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