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Resistive switching memory characteristics of Ge/GeO(x) nanowires and evidence of oxygen ion migration
The resistive switching memory of Ge nanowires (NWs) in an IrO(x)/Al(2)O(3)/Ge NWs/SiO(2)/p-Si structure is investigated. Ge NWs with an average diameter of approximately 100 nm are grown by the vapor–liquid-solid technique. The core-shell structure of the Ge/GeO(x) NWs is confirmed by both scanning...
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| Main Authors: | , , , , , |
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| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Springer
2013
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3686581/ https://ncbi.nlm.nih.gov/pubmed/23657016 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-220 |
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