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Comparison of resistive switching characteristics using copper and aluminum electrodes on GeO(x)/W cross-point memories

Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeO(x)/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HR...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Rahaman, Sheikh Ziaur, Maikap, Siddheswar
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4235176/
https://ncbi.nlm.nih.gov/pubmed/24305116
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-509
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