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Comparison of resistive switching characteristics using copper and aluminum electrodes on GeO(x)/W cross-point memories
Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeO(x)/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HR...
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| Publicado en: | Nanoscale Res Lett |
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| Autores principales: | , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4235176/ https://ncbi.nlm.nih.gov/pubmed/24305116 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-509 |
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