Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge(0.5)Se(0.5) solid electrolyte

We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge(0.5)Se(0.5)/W, as compared with Al/Cu/Ge(0.2)Se(0.8)/W structures, including stable AC endurance (>10(5) cycles), larger average SET voltage (approximately 0.6 V), excellent data retention...

Descrición completa

Gardado en:
Detalles Bibliográficos
Main Authors: Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Das, Atanu, Prakash, Amit, Wu, Ya Hsuan, Lai, Chao-Sung, Tien, Ta-Chang, Chen, Wei-Su, Lee, Heng-Yuan, Chen, Frederick T, Tsai, Ming-Jinn, Chang, Liann-Be
Formato: Artigo
Idioma:Inglês
Publicado: Springer 2012
Assuntos:
Nano Express
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC3524762/
https://ncbi.nlm.nih.gov/pubmed/23130908
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-614
Tags: Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!

Títulos similares