Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge(0.5)Se(0.5) solid electrolyte

We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge(0.5)Se(0.5)/W, as compared with Al/Cu/Ge(0.2)Se(0.8)/W structures, including stable AC endurance (>10(5) cycles), larger average SET voltage (approximately 0.6 V), excellent data retention...

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Hlavní autoři: Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Das, Atanu, Prakash, Amit, Wu, Ya Hsuan, Lai, Chao-Sung, Tien, Ta-Chang, Chen, Wei-Su, Lee, Heng-Yuan, Chen, Frederick T, Tsai, Ming-Jinn, Chang, Liann-Be
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2012
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3524762/
https://ncbi.nlm.nih.gov/pubmed/23130908
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-614
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