Rahaman, S. Z., Maikap, S., Das, A., Prakash, A., Wu, Y. H., Lai, C., . . . Chang, L. (2012). Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge(0.5)Se(0.5) solid electrolyte. Springer.
Stile di citazione ChicagoRahaman, Sheikh Ziaur, et al. Enhanced Nanoscale Resistive Switching Memory Characteristics and Switching Mechanism Using High-Ge-content Ge(0.5)Se(0.5) Solid Electrolyte. Springer, 2012.
Citazione MLARahaman, Sheikh Ziaur, et al. Enhanced Nanoscale Resistive Switching Memory Characteristics and Switching Mechanism Using High-Ge-content Ge(0.5)Se(0.5) Solid Electrolyte. Springer, 2012.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.