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Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge(0.2)Se(0.8) Film in Cu/GeSe(x)/W Structure

It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application. Even though the CBRAM devices using different materials, structures, and switching performance have been reported in Nanoscale R...

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Опубликовано в: :Nanoscale Res Lett
Главные авторы: Jana, Debanjan, Chakrabarti, Somsubhra, Rahaman, Sheikh Ziaur, Maikap, Siddheswar
Формат: Artigo
Язык:Inglês
Опубликовано: Springer US 2015
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Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC4596153/
https://ncbi.nlm.nih.gov/pubmed/26446075
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1090-1
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