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Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge(0.2)Se(0.8) Film in Cu/GeSe(x)/W Structure
It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application. Even though the CBRAM devices using different materials, structures, and switching performance have been reported in Nanoscale R...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4596153/ https://ncbi.nlm.nih.gov/pubmed/26446075 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1090-1 |
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