Prakash, A., Maikap, S., Rahaman, S. Z., Majumdar, S., Manna, S., & Ray, S. K. (2013). Resistive switching memory characteristics of Ge/GeO(x) nanowires and evidence of oxygen ion migration. Springer.
Citação norma ChicagoPrakash, Amit, Siddheswar Maikap, Sheikh Ziaur Rahaman, Sandip Majumdar, Santanu Manna, and Samit K. Ray. Resistive Switching Memory Characteristics of Ge/GeO(x) Nanowires and Evidence of Oxygen Ion Migration. Springer, 2013.
MLA citiranjePrakash, Amit, et al. Resistive Switching Memory Characteristics of Ge/GeO(x) Nanowires and Evidence of Oxygen Ion Migration. Springer, 2013.
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