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RRAM characteristics using a new Cr/GdO(x)/TiN structure
Resistive random access memory (RRAM) characteristics using a new Cr/GdO(x)/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study. Polycrystalline GdO(x) film with a thickness of 17 nm and a small via-hole size of 0.4 μm are observed by a tr...
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| Gepubliceerd in: | Nanoscale Res Lett |
|---|---|
| Hoofdauteurs: | , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Springer US
2014
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4493994/ https://ncbi.nlm.nih.gov/pubmed/26088980 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-680 |
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