Wordt geladen...
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO(x)/TiO(x)/TiN Structure
The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO(x)/TiO(x)/TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm. A 3-nm-thick amorphous TiO(x) with 4-nm-thick poly...
Bewaard in:
| Gepubliceerd in: | Nanomicro Lett |
|---|---|
| Hoofdauteurs: | , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Springer Berlin Heidelberg
2015
|
| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6223912/ https://ncbi.nlm.nih.gov/pubmed/30464987 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s40820-015-0055-3 |
| Tags: |
Voeg label toe
Geen labels, Wees de eerste die dit record labelt!
|