טוען...
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10(5) cycles, and good data retention of >10(4) s with a good resistance ratio of >10(2) at 85°C are obtained using a Ti nanolayer to form a W/TiO(x)/TaO(x)/W str...
שמור ב:
| Main Authors: | , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2014
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3999741/ https://ncbi.nlm.nih.gov/pubmed/24791160 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-152 |
| תגים: |
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