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Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10(5) cycles, and good data retention of >10(4) s with a good resistance ratio of >10(2) at 85°C are obtained using a Ti nanolayer to form a W/TiO(x)/TaO(x)/W str...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3999741/ https://ncbi.nlm.nih.gov/pubmed/24791160 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-152 |
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