A carregar...
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10(5) cycles, and good data retention of >10(4) s with a good resistance ratio of >10(2) at 85°C are obtained using a Ti nanolayer to form a W/TiO(x)/TaO(x)/W str...
Na minha lista:
| Main Authors: | , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3995362/ https://ncbi.nlm.nih.gov/pubmed/24636463 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-125 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|