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Conductive-bridging random access memory: challenges and opportunity for 3D architecture
The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The sw...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2015
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4412874/ https://ncbi.nlm.nih.gov/pubmed/25977660 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0880-9 |
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