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Conductive-bridging random access memory: challenges and opportunity for 3D architecture
The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The sw...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4412874/ https://ncbi.nlm.nih.gov/pubmed/25977660 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0880-9 |
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