Loading...
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most...
Na minha lista:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2011
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211166/ https://ncbi.nlm.nih.gov/pubmed/21711619 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-120 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|