Yüklüyor......
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electro...
Kaydedildi:
| Asıl Yazarlar: | , , , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Springer
2011
|
| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211179/ https://ncbi.nlm.nih.gov/pubmed/21711655 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-132 |
| Etiketler: |
Etiketle
Etiket eklenmemiş, İlk siz ekleyin!
|