Caricamento...
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electro...
Salvato in:
| Autori principali: | , , , , |
|---|---|
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2011
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211179/ https://ncbi.nlm.nih.gov/pubmed/21711655 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-132 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|