Загрузка...

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electro...

Полное описание

Сохранить в:
Библиографические подробности
Главные авторы: Greco, Giuseppe, Giannazzo, Filippo, Frazzetto, Alessia, Raineri, Vito, Roccaforte, Fabrizio
Формат: Artigo
Язык:Inglês
Опубликовано: Springer 2011
Предметы:
Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211179/
https://ncbi.nlm.nih.gov/pubmed/21711655
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-132
Метки: Добавить метку
Нет меток, Требуется 1-ая метка записи!