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Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were f...
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| Udgivet i: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2020
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7560388/ https://ncbi.nlm.nih.gov/pubmed/32957632 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13184140 |
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