Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were f...

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Vydáno v:Materials (Basel)
Hlavní autoři: Dub, Maksym, Sai, Pavlo, Przewłoka, Aleksandra, Krajewska, Aleksandra, Sakowicz, Maciej, Prystawko, Paweł, Kacperski, Jacek, Pasternak, Iwona, Cywiński, Grzegorz, But, Dmytro, Knap, Wojciech, Rumyantsev, Sergey
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI 2020
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7560388/
https://ncbi.nlm.nih.gov/pubmed/32957632
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13184140
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