Lanean...
Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were f...
Gorde:
| Argitaratua izan da: | Materials (Basel) |
|---|---|
| Egile Nagusiak: | , , , , , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI
2020
|
| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7560388/ https://ncbi.nlm.nih.gov/pubmed/32957632 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13184140 |
| Etiketak: |
Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|