Yüklüyor......
Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were f...
Kaydedildi:
| Yayımlandı: | Materials (Basel) |
|---|---|
| Asıl Yazarlar: | , , , , , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI
2020
|
| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7560388/ https://ncbi.nlm.nih.gov/pubmed/32957632 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13184140 |
| Etiketler: |
Etiketle
Etiket eklenmemiş, İlk siz ekleyin!
|