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AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer
This paper presented a AlGaN/GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates with a Si doped barrier layer were fabricated for high power application. Compared with the conventional SBDs, the SBDs with doped barrier layer have the lower turn-on voltage (<inline-formula> <...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2022-01-01
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| Colecção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9751041/ |
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