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Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electro...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer
2011
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211179/ https://ncbi.nlm.nih.gov/pubmed/21711655 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-132 |
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