A carregar...
Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN...
Na minha lista:
| Main Authors: | , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4214824/ https://ncbi.nlm.nih.gov/pubmed/25364317 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-590 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|