Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Lignende værker

• Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
  af: Cui, Peng, et al.
  Udgivet: (2018)
• Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs
  af: Cui, Peng, et al.
  Udgivet: (2018)
• Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
  af: Lv, Yuanjie, et al.
  Udgivet: (2012)
• Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
  af: Li, Liuan, et al.
  Udgivet: (2014)
• Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
  af: Dub, Maksym, et al.
  Udgivet: (2020)