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Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors
The single-tone power of the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths was measured. A distinct improvement in device linearity was observed in the sample with a larger gate width. The analysis of the variation of the parasitic source access resistance sho...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5772463/ https://ncbi.nlm.nih.gov/pubmed/29343744 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-19510-y |
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