A carregar...
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
Using measured capacitance-voltage curves with different gate lengths and current–voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in A...
Na minha lista:
| Main Authors: | , , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3477020/ https://ncbi.nlm.nih.gov/pubmed/22856465 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-434 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|