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Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers

In this work, a sputtered AlN template is employed to grow high-quality AlGaN/GaN heterostructures, and the effects of AlN nucleation layer growth conditions on the structural and electrical properties of heterostructures are investigated in detail. The optimal growth condition is obtained with comp...

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Publicado en:Materials (Basel)
Autores principales: Liu, Chuan-Yang, Zhang, Ya-Chao, Xu, Sheng-Rui, Jiang, Li, Zhang, Jin-Cheng, Hao, Yue
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI 2019
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Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC6947395/
https://ncbi.nlm.nih.gov/pubmed/31817364
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12244050
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