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Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers
In this work, a sputtered AlN template is employed to grow high-quality AlGaN/GaN heterostructures, and the effects of AlN nucleation layer growth conditions on the structural and electrical properties of heterostructures are investigated in detail. The optimal growth condition is obtained with comp...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6947395/ https://ncbi.nlm.nih.gov/pubmed/31817364 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12244050 |
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