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Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer
Here we demonstrate high-brightness InGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AlN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered Al...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6401382/ https://ncbi.nlm.nih.gov/pubmed/30837579 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-40120-9 |
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