Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates

Magnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface...

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Bibliografiska uppgifter
I publikationen:Materials (Basel)
Huvudupphovsmän: Wu, Jinxing, Li, Peixian, Xu, Shengrui, Zhou, Xiaowei, Tao, Hongchang, Yue, Wenkai, Wang, Yanli, Wu, Jiangtao, Zhang, Yachao, Hao, Yue
Materialtyp: Artigo
Språk:Inglês
Publicerad: MDPI 2020
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Article
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC7697943/
https://ncbi.nlm.nih.gov/pubmed/33202801
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13225118
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