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Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
Magnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface...
Shranjeno v:
| izdano v: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2020
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7697943/ https://ncbi.nlm.nih.gov/pubmed/33202801 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13225118 |
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