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Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by sputtering AlN with...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Gao, Yuan, Xu, Shengrui, Peng, Ruoshi, Tao, Hongchang, Zhang, Jincheng, Hao, Yue
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7558100/
https://ncbi.nlm.nih.gov/pubmed/32899535
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13183933
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