Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV...

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Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Hu, Hongpo, Zhou, Shengjun, Liu, Xingtong, Gao, Yilin, Gui, Chengqun, Liu, Sheng
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group 2017
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Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5353678/
https://ncbi.nlm.nih.gov/pubmed/28294166
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep44627
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